J.C. Marinace
JES
The crystalline perfection of Sn-doped GaAs crystals grown by the horizontal Bridgman technique was found to be dependent on the crystal growth direction. The highest perfection occurred for crystals grown near the <013> direction. Portions of both seeded and unseeded doped crystals grown in this direction were found to be dislocation-free. Also, undoped crystals seeded in the <013> direction were dislocation-free. © 1971, by The Electrochemical Society, Inc. All rights reserved.
J.C. Marinace
JES
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
K.A. Chao
Physical Review B
Hiroshi Ito, Reinhold Schwalm
JES