P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The crystalline perfection of Sn-doped GaAs crystals grown by the horizontal Bridgman technique was found to be dependent on the crystal growth direction. The highest perfection occurred for crystals grown near the <013> direction. Portions of both seeded and unseeded doped crystals grown in this direction were found to be dislocation-free. Also, undoped crystals seeded in the <013> direction were dislocation-free. © 1971, by The Electrochemical Society, Inc. All rights reserved.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J. Tersoff
Applied Surface Science