M. Hargrove, S.W. Crowder, et al.
IEDM 1998
The crystalline perfection of Sn-doped GaAs crystals grown by the horizontal Bridgman technique was found to be dependent on the crystal growth direction. The highest perfection occurred for crystals grown near the <013> direction. Portions of both seeded and unseeded doped crystals grown in this direction were found to be dislocation-free. Also, undoped crystals seeded in the <013> direction were dislocation-free. © 1971, by The Electrochemical Society, Inc. All rights reserved.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials