PaperEffective mass and collision time of (100) Si surface electronsF. Fang, A.B. Fowler, et al.Physical Review B
Conference paperTEMPERATURE AND ELECTRIC FIELD DEPENDENCE OF HOPPING CONDUCTION IN A TWO DIMENSIONAL IMPURITY BAND.G. Timp, A.B. Fowler, et al.ICPS Physics of Semiconductors 1984
PaperEffects of higher sub-band occupation in (100) Si inversion layersW.E. Howard, F. FangPhysical Review B
PaperConductance fluctuations in large metal-oxide-semiconductor structures in the variable-range hopping regimeDragana Popović, A.B. Fowler, et al.Physical Review B
