Conference paper
Scaling of ino.7gao.3as buried-channel MOSFETs
Yanning Sun, E.W. Kiewra, et al.
IEDM 2008
This paper reports an accurate method of measuring the anomalous leakage current in pass-gate MOSFET's unique to SOI devices. A high-speed measurement setup is used to provide experimental results, and to quantify the magnitude of leakage. Particularly, great care is taken to measure only the device leakage current and not the currents due to parasitic capacitances. Systematic influences of different factors such as temperature, bias, device history, and device structure on this leakage current are experimentally established.
Yanning Sun, E.W. Kiewra, et al.
IEDM 2008
Haizhou Yin, Z. Ren, et al.
ICSICT 2006
Haizhou Yin, C.Y. Sung, et al.
VLSI Technology 2007
M. Sherony, S.-H. Lo, et al.
ICM 2000