Conference paper
Impact ionization, degradation, and breakdown in SiO2
D.J. Dimaria, E. Cartier, et al.
MRS Proceedings 1992
A study was conducted on thermally driven D and H transport and exchange in typical metal-oxide-semiconductor (MOS) device structures. As such, D and H were quantified and profiled by elastic recoil detection (ERD), which was superior to SIMS in the accuracy of total amounts but showed limited depth resolution. The results clearly show that poly-Si and borophosphosilicate glass (BPSG) were effective in transporting hydrogenous species at rather low temperature.
D.J. Dimaria, E. Cartier, et al.
MRS Proceedings 1992
D.J. Dimaria, E. Cartier
Journal of Applied Physics
Yu.Yu. Lebedinskii, A. Zenkevich, et al.
Applied Physics Letters
A. Kerber, E. Cartier, et al.
VLSI Technology 2003