A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The occupied electronic structure of the GaAs(110)-Bi(1×1) monolayer system has been studied using angle-resolved photoelectron spectroscopy with a synchrotron-radiation source. The overlayer system possesses at least three detectable surface states (S, S and S) with two-dimensional character. Both the state with the lowest (S) and the state with the highest (S) binding energy are clearly visible over a large portion of the (1×1) surface Brillouin zone. The intermediate state (S) was observed along » X» and also in the neighborhood of X». The intensity of all three states exhibits a predominantly pz-like dependence on the polarization of the synchrotron light. However, S possesses a greater component of pxy-like character than either S or S. At the zone center, S is situated 0.5 eV above the valence-band maximum, and it disperses downwards by 1.0 eV to X», and by 0.8 eV to X». At M» it has its binding-energy maximum, 1.3 eV below the energetic position at "». The two-dimensional electronic structure of this system is compared with that of the closely related GaAs(110)-Sb(1×1) monolayer system and with the results of first-principles calculations. © 1991 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Frank Stem
C R C Critical Reviews in Solid State Sciences