Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs

We introduce a novel method for ultra-fast (< 100ns) measurement of the inversion charge in MOSFETs thereby minimizing the impact of charge trapping. This technique in conjunction with pulsed I-V measurements shows only a modest enhancement in peak mobility (∼ 15%) in high-K gate dielectric devices, indicating that charge trapping does not fully account for observed mobility degradation. © 2004 IEEE.