Processing and reconstruction effects on Al-GaAs(100) barrier heights
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1993
- Journal of Electronic Materials
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69 results for P.D. Kirchner
Two-dimensional arsenic-precipitate structures in GaAs
- M.R. Melloch
- C.L. Chang
- et al.
- 1993
- Journal of Crystal Growth
Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy
- Peter D. Kirchner
- Andreas Vaterlaus
- et al.
- 1993
- Journal of Crystal Growth
InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions
- R.C. Gee
- C.L. Lin
- et al.
- 1993
- Electronics Letters
Effect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1993
- Journal of Electronic Materials
Temperature-Dependent Composition, Ordering, and Band Bending at Gap(100) Surfaces
- C.L. Lin
- L.J. Brillson
- et al.
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Arsenic cluster dynamics in doped GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Journal of Applied Physics
Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
- F.K. LeGoues
- B.S. Meyerson
- et al.
- 1992
- Journal of Applied Physics
Doping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
Cross-sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy
- R.M. Feenstra
- E.T. Yu
- et al.
- 1992
- Applied Physics Letters