A 0.6 µm2 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- L.A. Nesbit
- J. Alsmeier
- et al.
- 1993
- IEDM 1993
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9 results for R.L. Kleinhenz
Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
An overview of 300mm SOI starting wafer quality and its yield detractors
- Pei Y. Tsai
- Marlene Almonte
- et al.
- 2005
- ISTFA 2005
0.21 μm2 7F2 trench cell with a locally-open globally-folded dual bitline for 1 Gb/4 Gb DRAM
- C. Radens
- U. Gruening
- et al.
- 1998
- VLSI Technology 1998
EPR Observation of an Au‐Fe Complex in Silicon: I. Experimental Data
- R.L. Kleinhenz
- Y.H. Lee
- et al.
- 2006
- physica status solidi (b)
Qualification of 300 mm SOI CMOS substrate material: Readiness for development and manufacturing
- H.J. Hovel
- M. Almonte
- et al.
- 2004
- Solid-State Electronics
Interstitial oxygen reduction in silicon at thermal donor temperatures
- M.P. Guse
- R.L. Kleinhenz
- 1992
- Journal of Applied Physics
Non-intrusive mapping of subsurface defects in semiconductors
- D. Guidotti
- M.A. Taubenblatt
- et al.
- 1992
- Applied Physics A Solids and Surfaces