BEOL interconnects for 45 nm node and beyond
- R.R. Yu
- J. Doyle
- et al.
- 2005
- VMIC 2005
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83 results for Donald Canaperi
Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
Silicon carrier with deep through-vias, fine pitch wiring, and through cavity for parallel optical transceiver
- Chirag S. Patel
- Cornelia K. Tsang
- et al.
- 2005
- ECTC 2005
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
CVD rhenium and PVD tantalum gate MOSFETs fabricated with a replacement technique
- James Pan
- Don Canaperi
- et al.
- 2004
- IEEE Electron Device Letters
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- DRC 2004
SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- ECS Meeting 2004
Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration scheme
- S.V. Nitta
- S. Purushothaman
- et al.
- 2004
- IEDM 2004
Integration of direct plating of Cu onto a CVD Ru liner
- S. Malhotra
- D. Canaperi
- et al.
- 2004
- AMC 2004