EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
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138 results for B.S. Meyerson
Design issues for SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Fully self-aligned epitaxial-base transistor
- R. Schulz
- M. Jost
- et al.
- 1989
- VLSI Technology 1989
SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
Boron-doped emitters for high-performance vertical pnp transistors
- J. Warnock
- P.F. Lu
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
SiGe-base, poly-emitter heterojunction bipolar transistors
- G.L. Patton
- D.L. Harame
- et al.
- 1989
- VLSI Technology 1989
Bonding, interfacial effects and adhesion in dlc
- A. Grill
- B.S. Meyerson
- et al.
- 1989
- Proceedings of SPIE 1989
GAS/SURFACE INTERACTIONS RELEVANT TO CHEMICAL VAPOR DEPOSITION TECHNIQUES.
- B.S. Meyerson
- M.L. Yu
- 1983
- American Institute of Chemical Engineers Annual Meeting 1983
AMORPHOUS HYDROGENATED SILICON SOLAR CELLS WITH THE HOMOGENEOUS CHEMICAL VAPOR DEPOSITION TECHNIQUE.
- J.F. Nijs
- Jerzy Kanicki
- et al.
- 1983
- E. C. Photovoltaic Solar Energy Conference 1983
IN-SITU DOPED SILICON VIA LPCVD; INTERACTIONS OF THE DOPANT/SILANE/SILICON SURFACE SYSTEM.
- B.S. Meyerson
- M.L. Yu
- 1983
- International Conference on Chemical Vapor Deposition 1983