Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- John D. Cressler
- James H. Comfort
- et al.
- 1991
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
90 results for Jack Y. C. Sun
The Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors
- Pong-Fei Lu
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- James Warnock
- John D. Cressler
- et al.
- 1990
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Geometry Effects in MOSFET Channel Length Extraction Algorithms
- M.R. Wordeman
- J.Y.-C. Sun
- et al.
- 1985
- IEEE Electron Device Letters
Single pulse output of partially depleted SOI FETs
- Keith A. Jenkins
- Y. Taur
- et al.
- 1996
- IEEE International SOI Conference 1996
History dependence of non-fully depleted (NFD) digital SOI circuits
- F. Assaderaghi
- G. Shahidi
- et al.
- 1996
- VLSI Technology 1996
Suppression of the SOI floating-body effects by linked-body device structure
- W. Chen
- Y. Taur
- et al.
- 1996
- VLSI Technology 1996
Transient effects in floating body SOI NMOSFET's
- J. Gautier
- Keith A. Jenkins
- et al.
- 1995
- IEEE International SOI Conference 1995