A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992
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90 results for Jack Y. C. Sun
Perimeter effects in small geometry bipolar transistors
- Wai Lcc
- Jack Y.-C. Sun
- et al.
- 1992
- VLSI Technology 1992
Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- ESSDERC 1991
Advanced bipolar technology for the 1990s
- J.Y.-C. Sun
- J.H. Comfort
- et al.
- 1991
- VLSI-TSA 1991
A 26 ps self-aligned epitaxial silicon base bipolar technology
- J.H. Comfort
- P.F. Lu
- et al.
- 1990
- VLSI Technology 1990
63-75 GHz fT SiGe-base heterojunction bipolar technology
- G.L. Patton
- J.H. Comfort
- et al.
- 1990
- VLSI Technology 1990
Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors
- Joachim N. Burghartz
- Jack Y.-C. Sun
- et al.
- 1990
- VLSI Technology 1990
Study of boron penetration through thin oxide with p+-polysilicon gate
- J.Y.-C. Sun
- C.Y. Wong
- et al.
- 1989
- VLSI Technology 1989
Hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron X-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1989
- IRPS 1989
3.5ns CMOS 64K ECL RAM at 77°K
- S.E. Schuster
- T.I. Chappell
- et al.
- 1988
- VLSI Circuits 1988