Low temperature operation of Si and SiGe bipolar transistors
- E.F. Crabbe
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Publications
90 results for Jack Y. C. Sun
35 GHz/35 psec ECL pnp technology
- J. Warnock
- P.F. Lu
- et al.
- 1990
- IEDM 1990
Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1990
- Journal of Electronic Materials
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- James Warnock
- John D. Cressler
- et al.
- 1990
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
The Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors
- Pong-Fei Lu
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Avalanche Electron Injection in 4-nm Si3N4/8-nm SiO2 Dielectric Structure: Turn-Around Phenomenon and Si-SiO2 Interface Degradation
- Leonello Dori
- Maurizio Severi
- et al.
- 1990
- IEEE T-ED
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989