Current transport in high-barrier IrSi/Si Schottky diodes
- Marc Wittmer
- 1990
- Physical Review B
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46 results for M. Wittmer
Amorphous hydrogenated carbon films on semiconductors - I. Electronic properties of the interface
- D. Ugolini
- J. Eitle
- et al.
- 1989
- Applied Physics A Solids and Surfaces
Amorphous hydrogenated carbon films on semiconductors - II. Microstructural properties of the interface
- M. Wittmer
- D. Ugolini
- et al.
- 1989
- Applied Physics A Solids and Surfaces
Metallic CaSi2 epitaxial films on Si(111)
- J.F. Morar
- M. Wittmer
- 1988
- Physical Review B
Growth of epitaxial CaSi2 films on Si(111)
- J.F. Morar
- M. Wittmer
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Self-aligned diffusion barrier by nitridation of TiSi2
- Marc Wittmer
- 1988
- Applied Physics Letters
Characterization of reactively sputtered ruthenium dioxide for very large scale integrated metallization
- L. Krusin-Elbaum
- M. Wittmer
- et al.
- 1987
- Applied Physics Letters
Chemical reaction and Schottky-barrier formation at the Ir/Si interface
- M. Wittmer
- P. Oelhafen
- et al.
- 1987
- Physical Review B
Characterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates
- M. Wittmer
- D.A. Smith
- et al.
- 1986
- Applied Physics Letters
Electronic structure of iridium silicides
- M. Wittmer
- P. Oelhafen
- et al.
- 1986
- Physical Review B