On the connection of SRAM cell stability with switching history in partially depleted SOI technology
- Brian L. Ji
- Hussein I. Hanafi
- et al.
- 2006
- ICSICT 2006
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28 results for H.I. Hanafi
Extremely-scaled double-gate CMOS with non-self-aligned back gate
- Keunwoo Kim
- Hussein I. Hanafi
- et al.
- 2005
- VLSI Technology 2005
Off-state current and performance analysis for double-gate CMOS with non-self-aligned back gate
- Keunwoo Kim
- Hussein I. Hanafi
- et al.
- 2005
- IEEE Transactions on Electron Devices
Trimming of hard-masks by gaseous chemical oxide removal (COR) for sub-10nm gates/fins, for gate length control and for embedded logic
- Wesley C. Natzle
- David Horak
- et al.
- 2004
- ASMC 2004
70 nm damascene-gate MOSFETs with minimal polysilicon gate-depletion
- Hussein I. Hanafi
- Russell Arndt
- et al.
- 2001
- ESSDERC 2001
New polysilicon disposable sidewall process for sub-50 nm CMOS
- K.L. Lee
- D. Boyd
- et al.
- 2001
- ESSDERC 2001
Data retention in SOI-DRAM with trench capacitor cell
- Hussein I. Hanafi
- Thomas Kanarsky
- et al.
- 1998
- ESSDERC 1998
Fast and long retention-time nano-crystal memory
- Hussein I. Hanafi
- Sandip Tiwari
- et al.
- 1996
- IEEE Transactions on Electron Devices
A silicon nanocrystals based memory
- Sandip Tiwari
- Farhan Rana
- et al.
- 1996
- Applied Physics Letters
Floating-body concerns for SOI dynamic random access memory (DRAM)
- J.A. Mandelman
- J. Barth
- et al.
- 1996
- IEEE International SOI Conference 1996