Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
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67 results for J.N. Burghartz
Novel In-Situ Doped Polysilicon Emitter Process with Buried Diffusion Source (Bds)
- Joachim N. Burghartz
- Andrew C. Megdanis
- et al.
- 1991
- IEEE Electron Device Letters
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Selective Epitaxy Base Transistor (SEBT)
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- IEEE Electron Device Letters
Analysis of generic spiral-coil RF transformers on silicon
- K.T. Ng
- B. Rejaei
- et al.
- 2000
- SiRF 2000
Integrated multilayer RF passives in silicon technology
- J.N. Burghartz
- 1998
- SiRF 1998
Spiral and solenoidal inductor structures on silicon using Cu-damascene interconnects
- D. Edelstein
- J.N. Burghartz
- 1998
- IITC 1998
5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology
- M. Soyuer
- J.O. Plouchart
- et al.
- 1997
- RFIC 1997
Silicon RF technology - The two generic approaches
- Joachim N. Burghartz
- 1997
- ESSDERC 1997