Wenjuan Zhu, Damon B. Farmer, et al.
Applied Physics Letters
A 2.4-GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12-GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2-nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBe/Hz is achieved at 20-kHz offset. The circuit dissipates 50 mW from a 3.6-V supply.
Wenjuan Zhu, Damon B. Farmer, et al.
Applied Physics Letters
Joachim N. Burghartz, Keith A. Jenkins, et al.
IEEE Electron Device Letters
Christos Dimitrakopoulos, Yu-Ming Lin, et al.
Journal of Vacuum Science and Technology B
Mark B. Ketchen, Manjul Bhushan, et al.
IEEE International SOI Conference 2005