Joachim N. Burghartz, Keith A. Jenkins, et al.
IEEE Electron Device Letters
A 2.4-GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12-GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2-nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBe/Hz is achieved at 20-kHz offset. The circuit dissipates 50 mW from a 3.6-V supply.
Joachim N. Burghartz, Keith A. Jenkins, et al.
IEEE Electron Device Letters
Franco Stellari, Alan J. Weger, et al.
IRPS 2018
Joachim N. Burghartz, Siegfried R. Mader, et al.
IEEE T-ED
Phillip J. Restle, Craig A. Carter, et al.
ISSCC 2002