6.25-GHz low DC power low-noise amplifier in SiGe
- H. Ainspan
- M. Soyuer
- et al.
- 1997
- CICC 1997
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67 results for J.N. Burghartz
11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonator
- M. Soyuer
- J.N. Burghartz
- et al.
- 1996
- BCTM 1996
RF components implemented in an analog SiGe bipolar technology
- J.N. Burghartz
- M. Soyuer
- et al.
- 1996
- BCTM 1996
RF and microwave building blocks in a standard BiCMOS technology
- M. Soyuer
- J.N. Burghartz
- et al.
- 1996
- ISCAS 1996
Opportunities for standard silicon technology in RFMicrowave applications
- J.N. Burghartz
- M. Soyuer
- et al.
- 1995
- ESSDERC 1995
APCVD-grown self-aligned SiGe-base HBTs
- J.N. Burghartz
- T.O. Sedgwick
- et al.
- 1993
- BCTM 1993
SPIRIT - A bipolar/BiCMOS isolation technology for high-performance VLSI
- J.N. Burghartz
- A.O. Cifuentes
- et al.
- 1993
- VLSI Technology 1993
An ultra-low thermal-budget SiGe-base bipolar technology
- J.N. Burghartz
- D.A. Grützmacher
- et al.
- 1993
- VLSI Technology 1993
High performance complementary bipolar technology
- J. Warnock
- J.D. Cressler
- et al.
- 1993
- VLSI Technology 1993
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992