Scaling the gate dielectric: materials, integration, and reliability
- D.A. Buchanan
- 1999
- IBM J. Res. Dev
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51 results for D.A. Buchanan
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
- S.H. Lo
- D.A. Buchanan
- et al.
- 1999
- IBM J. Res. Dev
Fabrication of midgap metal gates compatible with ultrathin dielectrics
- D.A. Buchanan
- F.R. McFeely
- et al.
- 1998
- Applied Physics Letters
Modeling and characterization of n+- and p+-polysilicon-gated ultra-thin oxides (21-26 angstroms)
- S.H. Lo
- D.A. Buchanan
- et al.
- 1997
- VLSI Technology 1997
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
- S.H. Lo
- D.A. Buchanan
- et al.
- 1997
- IEEE Electron Device Letters
Reliability and integration of ultra-thin gate dielectrics for advanced CMOS
- D.A. Buchanan
- S.H. Lo
- 1997
- Microelectronic Engineering
Defect instability in ultra-thin oxides on silicon
- L. Xie
- K.R. Farmer
- et al.
- 1997
- Microelectronic Engineering
CMOS scaling into the nanometer regime
- Yuan Taur
- Douglas A. Buchanan
- et al.
- 1997
- Proceedings of the IEEE
Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions
- E. Cartier
- J.C. Tsang
- et al.
- 1997
- Microelectronic Engineering
On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
- D.A. Buchanan
- J.H. Stathis
- et al.
- 1997
- Microelectronic Engineering