Hall Mobility in Hafnium Oxide Based MOSFETs: Charge Effects
- L.Å. Ragnarsson
- N.A. Bojarczuk
- et al.
- 2003
- IEEE Electron Device Letters
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15 results for J. Karasinski
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- IEEE Electron Device Letters
LPCVD TUNGSTEN SILICIDE WITH TITANIUM UNDERLAYER.
- R.V. Joshi
- L. Krusin-Elbaum
- et al.
- 1985
- VLSI Technology 1985
Correlation of Structure and Magnetic Properties of Thin CoP Films
- J. Mahlke
- N.C. Anderson
- et al.
- 2019
- JES
Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge
- James Jer-Hueih Chen
- Nestor A. Bojarczuk Jr.
- et al.
- 2004
- IEEE Transactions on Electron Devices
Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures
- L.Å. Ragnarsson
- N.A. Bojarczuk
- et al.
- 2003
- Journal of Applied Physics
High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition
- S. Guha
- E. Cartier
- et al.
- 2001
- Journal of Applied Physics
Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal-oxide-semiconductor field-effect transistors: Effective electron mobility
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- Applied Physics Letters
Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy
- D.J. Kim
- D.Y. Ryu
- et al.
- 2000
- Journal of Applied Physics
Transplanted Si films on arbitrary substrates using GaN underlayers
- Supratik Guha
- Arunava Gupta
- et al.
- 2000
- Applied Physics Letters