Design, preparation, characterization, and lithographic imaging of high performance chemically amplified deep UV resist
- Hiroshi Ito
- G. Breyta
- et al.
- 1997
- ACS Spring 1997
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17 results for D. Fenzel‐Alexander
193 nm positive tone bilayer resist based on norbornene-maleic anhydride copolymers
- R. Sooriyakumaran
- D. Fenzel-Alexander
- et al.
- 2000
- Microlithography 2000
High resolution 248 nm bilayer resist
- Q. Lin
- K.E. Petrillo
- et al.
- 1999
- SPIE Advances in Resist Technology and Processing 1999
Positive bilayer resists for 248- and 193-nm lithography
- Ratnam Sooriyakumaran
- Gregory M. Wallraff
- et al.
- 1998
- Microlithography 1998
Ion transfer in contact electrification
- A. Diaz
- D. Fenzel-Alexander
- et al.
- 1990
- Electronic Imaging: Advanced Devices and Systems 1990
Etch selectivity of 4SiMA: Hydroxystyrene based copolymers. silicon chemistry for bilayer resist systems
- G.M. Wallraff
- Carl E. Larson
- et al.
- 1998
- J. Photopolym. Sci. Tech.
Lithographic feasibility of escap beyond quarter micron
- Hiroshi Ito
- Greg Breyta
- et al.
- 1996
- J. Photopolym. Sci. Tech.
Effect of ionomer ion aggregation on contact charging
- A. Diaz
- D. Fenzel‐Alexander
- et al.
- 2003
- Journal of Polymer Science, Part B: Polymer Physics
Importance of Dissociated Ions in Contact Charging
- A. Diaz
- D. Fenzel-Alexander
- et al.
- 2002
- Langmuir
Contact Charging Characteristics of Styrene-Butyl Methacrylate Containing Dodecametallophosphate Salts
- A. Gutierrez
- D. Fenzel-Alexander
- et al.
- 2002
- Langmuir