Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
- M.M. Frank
- V.K. Paruchuri
- et al.
- 2005
- VLSI-TSA 2005
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24 results for R. Jammy
A comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)
- S. Zafar
- M. Yang
- et al.
- 2005
- VLSI Technology 2005
Ultra-thin SOI replacement gate CMOS with ALD TaN / high-k gate stack
- B. Doris
- B.P. Linder
- et al.
- 2005
- VLSI-TSA 2005
CVD rhenium and PVD tantalum gate MOSFETs fabricated with a replacement technique
- James Pan
- Don Canaperi
- et al.
- 2004
- IEEE Electron Device Letters
Interface engineering for enhanced electron mobilities in W/HfO 2 gate stacks
- A.C. Callegari
- P. Jamison
- et al.
- 2004
- IEDM 2004
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
Nitrogen interface engineering in Al 2O 3 capacitors for improved thermal stability
- P.D. Kirsch
- D.-G. Park
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Systematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates
- E. Cartier
- V. Narayanan
- et al.
- 2004
- VLSI Technology 2004
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
- et al.
- 2004
- VLSI Technology 2004
Dual work function metal gate CMOS using CVD metal electrodes
- V. Narayanan
- A.C. Callegari
- et al.
- 2004
- VLSI Technology 2004