Air spacer for 10nm FinFET CMOS and beyond
- K. Cheng
- C. Park
- et al.
- 2016
- IEDM 2016
Publications
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45 results for Kangguo Cheng
Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- IEDM 2013
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
- Q. Liu
- M. Vinet
- et al.
- 2013
- IEDM 2013
Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology
- Davood Shahrjerdi
- Stephen W. Bedell
- et al.
- 2012
- IEDM 2012
Assessment of fully-depleted planar CMOS for low power complex circuit operation
- Zhibin Ren
- S. Mehta
- et al.
- 2011
- IEDM 2011
Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2010
- ISSCC 2010
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Direct silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOS
- Haizhou Yin
- C.Y. Sung
- et al.
- 2006
- IEDM 2006
A 0.127 μm2 high performance 65 nm SOI based embedded DRAM for on-processor applications
- G. Wang
- K. Cheng
- et al.
- 2006
- IEDM 2006
Exploring the Limits of Cobalt Liner Thickness in Advanced Copper Interconnects
- Nicholas A. Lanzillo
- Kisik Choi
- et al.
- 2019
- IEEE Electron Device Letters