Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2018
- IEDM 2018
Publications
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45 results for M. Chudzik
Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology
- Ruqiang Bao
- Steven Hung
- et al.
- 2018
- IEDM 2018
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- S. Narasimha
- P. Chang
- et al.
- 2012
- IEDM 2012
New layout dependency in high-k/metal gate MOSFETs
- M. Hamaguchi
- Deleep R. Nair
- et al.
- 2011
- IEDM 2011
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Stress liner proximity technique to enhance carrier mobility in high-κ metal gate MOSFETs
- Dechao Guo
- Kathryn Schonenberg
- et al.
- 2009
- MRS Fall Meeting 2009
Scaling deep trench based eDRAM on SOI to 32nm and beyond
- G. Wang
- D. Anand
- et al.
- 2009
- IEDM 2009
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
- K. Henson
- H. Bu
- et al.
- 2008
- IEDM 2008
A comparison of electrical and physical properties of MOCVD hafnium silicate thin films deposited using various silicon precursors
- P. Jamison
- M. Copel
- et al.
- 2006
- MRS Spring Meeting 2006