Tungsten and cobalt metallization: A material study for MOL local interconnects
- Vimal Kamineni
- Mark Raymond
- et al.
- 2016
- IITC/AMC 2016
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55 results for John Arnold
Lithographic qualification of high-Transmission mask blank for 10nm node and beyond
- Yongan Xu
- Tom Faure
- et al.
- 2016
- SPIE Advanced Lithography 2016
DSA via hole shrink for advanced node applications
- Cheng Chi
- Chi Chun Liu
- et al.
- 2016
- SPIE Advanced Lithography 2016
DSA patterning options for FinFET formation at 7nm node
- Chi Chun Liu
- Elliott Franke
- et al.
- 2016
- SPIE Advanced Lithography 2016
Plasma etch patterning of EUV lithography: Balancing roughness and selectivity trade off
- Sebastian U. Engelmann
- Qinghuang Lin
- et al.
- 2016
- SPIE Advanced Lithography 2016
Comparison of left and right side line edge roughness in lithography
- Lei Sun
- Nicole Saulnier
- et al.
- 2016
- SPIE Advanced Lithography 2016
Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)
- Yannick Feurprier
- Katie Lutker-Lee
- et al.
- 2015
- SPIE Advanced Lithography 2015
Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL
- Changwoo Lee
- Bhaskar Nagabhirava
- et al.
- 2015
- SPIE Advanced Lithography 2015
EUV processing and characterization for BEOL
- Nicole Saulnier
- Yongan Xu
- et al.
- 2015
- SPIE Advanced Lithography 2015
56 nm pitch copper dual-damascene interconnects with triple pitch split metal and double pitch split via
- James Hsueh-Chung Chen
- Christopher Waskiewicz
- et al.
- 2012
- IITC 2012