Carrier mobility enhancement in strained Si-On-Insulator fabricated by wafer bonding
- L.J. Huang
- J.O. Chu
- et al.
- 2001
- VLSI Technology 2001
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6 results for Lijuan Huang
Preparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices
- L.J. Huang
- K.K. Chan
- et al.
- 2000
- IEEE International SOI Conference 2000
Electron and hole mobility enhancement in strained SOI by wafer bonding
- Lijuan Huang
- Jack O. Chu
- et al.
- 2002
- IEEE Transactions on Electron Devices
Carrier mobility enhancement in strained silicon-on-insulator
- L.J. Huang
- 2002
- Electronic Engineering (London)
SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
- L.J. Huang
- J.O. Chu
- et al.
- 2001
- Applied Physics Letters
Transfer of semiconductor and oxide films by wafer bonding and layer cutting
- Qin-Yi Tong
- Li-Juan Huang
- et al.
- 2000
- Journal of Electronic Materials