K. Ismail, S. Nelson, et al.
Applied Physics Letters
SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm2/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate. © 2001 American Institute of Physics.
K. Ismail, S. Nelson, et al.
Applied Physics Letters
S.J. Koester, K.L. Saenger, et al.
Electronics Letters
P.M. Mooney, J.A. Ott, et al.
Applied Physics Letters
S.J. Koester, B.-U. Klepser, et al.
DRC 1998