S.J. Koester, K.L. Saenger, et al.
Electronics Letters
SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm2/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate. © 2001 American Institute of Physics.
S.J. Koester, K.L. Saenger, et al.
Electronics Letters
Z. Kovats, T. Salditt, et al.
Journal of Physics D: Applied Physics
U. Wieser, U. Kunze, et al.
Applied Physics Letters
Takeshi Nogami, J. Maniscalco, et al.
IITC 2010