Electromigration in AlCu lines: Comparison of Dual Damascene and metal reactive ion etching
- R. Filippi
- M. Gribelyuk
- et al.
- 2001
- Thin Solid Films
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5 results for R.F. Schnabel
The microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines
- K.P. Rodbell
- L. Gignac
- et al.
- 2000
- Journal of Applied Physics
Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond
- R.F. Schnabel
- L. Clevenger
- et al.
- 2000
- Microelectronic Engineering
Linewidth and underlayer influence on texture in submicrometer-wide Al and AlCu lines
- J.L. Hurd
- K.P. Rodbell
- et al.
- 1998
- Applied Physics Letters
Dry etch challenges of 0.25 μm dual damascene structures
- R.F. Schnabel
- D. Dobuzinski
- et al.
- 1997
- Vide: Science, Technique et Applications