Spin transmission through NiO in Pt/NiO/NM/Py heterostructure
- Biswajit Sahoo
- Christopher Safranski
- et al.
- 2024
- MMM 2024
Publications
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53 results for Pouya Hashemi
First demonstration of high retention energy barriers and 2 ns switching, using magnetic ordered-alloy-based STT MRAM devices
- Matthias Gottwald
- Guohan Hu
- et al.
- 2024
- VLSI Technology and Circuits 2024
Easy plane magnetic tunnel junction as an entropy source for computing
- Jonathan Sun
- Christopher Safranski
- et al.
- 2023
- MMM 2023
Easy-plane dominant stochastic magnetic tunnel junction with synthetic antiferromagnetic layers
- Jonathan Z. Sun
- Christopher Safranski
- et al.
- 2023
- Physical Review B
Stochastic magnetic tunnel junction with easy-plane dominant anisotropy
- Jonathan Z. Sun
- Christopher Safranski
- et al.
- 2023
- Physical Review B
Double spin-torque magnetic tunnel junction devices for last-level cache applications
- G. Hu
- C. Safranski
- et al.
- 2022
- IEDM 2022
STT-MRAM - Status and Outlook
- Daniel C. Worledge
- C. Safranski
- et al.
- 2022
- TMRC 2022
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions
- C. Safranski
- G. Hu
- et al.
- 2022
- VLSI Technology and Circuits 2022
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
- Christopher Safranski
- Guohan Hu
- et al.
- 2021
- IEEE T-ED
2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction
- Guohan Hu
- Jonathan Sun
- et al.
- 2021
- IEDM 2021