Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications

We demonstrate reliable sub-nanosecond switching in two-terminal spin transfer torque magnetoresistive random access memory (STT-MRAM) devices by using double spin-magnetic tunnel junctions (DS-MTJs). A write-error-rate (WER) of 1 6 was achieved in 194 devices with 250-ps write pulses and tight distributions. The WER 1 6 was also demonstrated over a temperature range of 40 C–85 C in a single device with 225-ps write pulses. No degradation was observed after 110 write cycles in selected single devices, written with 250-ps write pulses. We compare the DS-MTJ device switching performance with the published results from the state-of-the-art three-terminal spin–orbit torque (SOT) MRAM devices and show a 10 reduction in switching current density () and 3–10 reduction in power consumption for devices with similar energy barriers ().