Transient pass-transistor leakage current in SOI MOSFET's
- F. Assaderaghi
- G. Shahidi
- et al.
- 1997
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
80 results for Robert Dennard
Inverter Performance Of Deep-Submicrometer Mosfet'S
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
Design and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
1 µm MOSFET VLSI Technology: Part II-Device Designs and Characteristics for High-Performance Logic Applications
- Robert H. Dennard
- Fritz H. Gaensslen
- et al.
- 1979
- IEEE JSSC
1, μm MOSFET VLSI Technology: Part IV-Hot-Electron Design Constraints
- Tak H. Ning
- Peter W. Cook
- et al.
- 1979
- IEEE JSSC
Design of Ion-Implanted MOSFET's With Very Small Physical Dimensions
- Robert H. Dennard
- Fritz H. Gaensslen
- et al.
- 1974
- IEEE JSSC
IGFET Circuit Performance—N-Channel Versus P-Channel
- George Cheroff
- Dale L. Critchlow
- et al.
- 1969
- IEEE JSSC
Advanced FDSOI design: The U-channel device for 7nm node and beyond
- Ramachandran Muralidhar
- Robert Dennard
- et al.
- 2017
- S3S 2017
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Circuits 2013
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Technology 2013