Pattern transfer of directed self-assembly patterns for CMOS device applications
- Hsin-Yu Tsai
- Hiroyuki Miyazoe
- et al.
- 2013
- J. Micro/Nanolithogr. MEMS MOEMS
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53 results for Jim Bucchignano
Patterning of CMOS device structures for 40-80nm pitches and beyond
- Sebastian U. Engelmann
- R.M. Martin
- et al.
- 2012
- SPIE Advanced Lithography 2012
Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly
- Hsin-Yu Tsai
- Hiroyuki Miyazoe
- et al.
- 2012
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Pattern collapse mitigation strategies for EUV Lithography
- Dario L. Goldfarb
- Robert L. Bruce
- et al.
- 2012
- SPIE Advanced Lithography 2012
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping
- M. Guillorn
- J. Chang
- et al.
- 2009
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
High mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009