New layout dependency in high-k/metal gate MOSFETs
- M. Hamaguchi
- Deleep R. Nair
- et al.
- 2011
- IEDM 2011
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12 results for Deleep R. Nair
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Competitive and cost effective high-k based 28nm CMOS technology for low power applications
- F. Arnaud
- A. Thean
- et al.
- 2009
- IEDM 2009
32nm general purpose bulk CMOS technology for high performance applications at low voltage
- F. Arnaud
- J. Liu
- et al.
- 2008
- IEDM 2008
Effect of germanium preamorphization implant on performance and gate-induced drain leakage in SiGe channel pFET
- Vishal A. Tiwari
- Young Way Teh
- et al.
- 2015
- IEEE Electron Device Letters
Analysis of systematic and random variation of gate-induced drain leakage in silicon-germanium channel pFET
- Vishal A. Tiwari
- Ch. L. N. Pavan
- et al.
- 2016
- ICEE 2016
Modeling of gate-induced drain leakage mechanisms in silicon-germanium channel pFET
- Vishal A. Tiwari
- Andreas Scholze
- et al.
- 2014
- ICEE 2014
A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process
- X. Chen
- S. Samavedam
- et al.
- 2008
- VLSI Technology 2008
Characterization and Analysis of Random Telegraph Noise in Scaled SiGe Channel HKMG pMOSFETs
- Ch. L. N. Pavan
- Rama Divakaruni
- et al.
- 2022
- IEEE T-ED
OFF-State Leakage and Performance Variations Associated with Germanium Preamorphization Implant in Silicon-Germanium Channel pFET
- Vishal A. Tiwari
- Rama Divakaruni
- et al.
- 2018
- IEEE T-ED