Decoupling graphene from SiC(0001) via oxidation
- Satoshi Oida
- Fenton R. McFeely
- et al.
- 2010
- Physical Review B - CMMP
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150 results for Matthew Copel
Determination of band offsets, chemical bonding, and microstructure of the (TbxSc1-x) 2 O3 /Si system
- I. Geppert
- M. Eizenberg
- et al.
- 2010
- Journal of Applied Physics
Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy
- Hiroaki Arimura
- Richard Haight
- et al.
- 2010
- Applied Physics Letters
Oxygen migration in TiO2-based higher-k gate stacks
- Sangbum Kim
- Stephen L. Brown
- et al.
- 2010
- Journal of Applied Physics
Investigation of band gap, band alignment and bonding states of the (TbxSc1-x)2O3/ Si system
- I. Geppert
- M. Eizenberg
- et al.
- 2010
- ECS Transactions
Oxygen transport in high-κ/ metal gate stacks and physical characterization by SIMS using isotope labeled oxygen
- Marinus Hopstaken
- John Bruley
- et al.
- 2010
- ECS Transactions
Ultimate EOT scaling (< 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility
- Takashi Ando
- Martin M. Frank
- et al.
- 2010
- ECS Transactions
Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
Interaction of La2O3 capping layers with HfO 2 gate dielectrics
- M. Copel
- S. Guha
- et al.
- 2009
- Applied Physics Letters