Impact of trap-assisted tunneling and channel quantization on InAs/Si hetero Tunnel FETs
- Saurabh Sant
- Andreas Schenk
- et al.
- 2016
- DRC 2016
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159 results for Heike Riel
III-V-based hetero tunnel FETs: A simulation study with focus on non-ideality effects
- Andreas Schenk
- Saurabh Sant
- et al.
- 2016
- EUROSOI-ULIS 2016
The future of nanoelectronics: New materials, architectures and devices
- 2015
- ISVLSI 2015
III-V device integration on Si using template-assisted selective epitaxy
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- DRC 2015
Comparative simulation study of InAs/Si and All-III-V hetero tunnel FETs
- Andreas Schenk
- Saurabh Sant
- et al.
- 2015
- ECS Meeting 2015 Chicago
Fabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- EUROSOI-ULIS 2015
Modelling, simulation and optimization for a SThm nanoprobe
- Bin Yang
- Michel Lenczner
- et al.
- 2014
- EuroSimE 2014
III-V semiconductor nanowires for future devices
- Heinz Schmid
- Mattias Borg
- et al.
- 2014
- DATE 2014
Heat dissipation and thermometry in nanosystems: When interfaces dominate
- Bernd Gotsmann
- Fabian Menges
- et al.
- 2013
- DRC 2013
Electrical and thermoelectrical properties of gated InAs nanowires
- Philipp Mensch
- Siegfried Karg
- et al.
- 2013
- ESSDERC 2013