A 3.0 TFLOPS 0.62V Scalable Processor Core for High Compute Utilization AI Training and Inference
- Jinwook Oh
- Sae Kyu Lee
- et al.
- 2020
- VLSI Circuits 2020
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27 results for Siyu Koswatta
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI Technology 2017
High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI-TSA 2017
Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
- Pouya Hashemi
- Kam-Leung Lee
- et al.
- 2016
- VLSI Technology 2016
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- Pouya Hashemi
- Takashi Ando
- et al.
- 2016
- VLSI Technology 2016
Compact model and performance estimation for tunneling nanowire FET
- Paul Solomon
- David J. Frank
- et al.
- 2011
- DRC 2011
Self-aligned In0.53Ga0.47As/InAs/InP vertical tunnel FETs
- Guangle Zhou
- Y. Lu
- et al.
- 2011
- CS MANTECH 2011
Geometry dependent tunnel FET performance - Dilemma of electrostatics vs. quantum confinement
- Yeqing Lu
- Alan C. Seabaugh
- et al.
- 2010
- DRC 2010
Device characteristics of single-layer graphene FETs grown on copper
- Kristof Tahy
- Margaret Jane Fleming
- et al.
- 2010
- DRC 2010
Are Si/SiGe tunneling field-effect transistors a good idea?
- Steven J. Koester
- Isaac Lauer
- et al.
- 2010
- ECS Transactions