BEOL compatible high-capacitance MIMCAP structure using a novel high k material
- P. Jamison
- John Massey
- et al.
- 2020
- IMCS 2020
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A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Applied Physics Letters
Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory Applications
- Ernest Wu
- Takashi Ando
- et al.
- 2019
- IEDM 2019
Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications
- Ruqiang Bao
- Reinaldo A. Vega
- et al.
- 2019
- IEDM 2019
Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
- Ernest Y. Wu
- Andrew Kim
- et al.
- 2017
- IEDM 2017
Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- ASICON 2017
CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond
- Takashi Ando
- Eduard Cartier
- et al.
- 2016
- IEDM 2016
Selective GeOx-scavenging from interfacial layer on Si1-xGex channel for high mobility Si/Si1-xGex CMOS application
- Choonghyun Lee
- H. Kim
- et al.
- 2016
- VLSI Technology 2016
SiO2 free HfO2 gate dielectrics by physical vapor deposition
- P. Jamison
- Takaaki Tsunoda
- et al.
- 2015
- IEEE T-ED
Phenomena of dielectric capping layer insertion into high-κ metal gate stacks in gate-first/gate-last integration
- H. Jagannathan
- P. Jamison
- et al.
- 2012
- ECS Meeting 2012