Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHz
- Vibhor Jain
- T. Kessler
- et al.
- 2014
- BCTM 2014
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15 results for Jack Pekarik
A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
- John J. Pekarik
- Jim Adkisson
- et al.
- 2014
- BCTM 2014
A novel approach to isolating the edge of the shallow trench isolation in SiGe HBTs for improved device performance
- Renata Camillo-Castillo
- Q. Liu
- et al.
- 2014
- ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating fT/fMAX 285GHz/475GHz through simultaneous reduction of base resistance and extrinsic collector capacitance
- Q. Liu
- Jim Adkisson
- et al.
- 2014
- ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f T/fMAX through reduced Rb and Ccb parasitics
- Renata Camillo-Castillo
- Q. Liu
- et al.
- 2013
- BCTM 2013
Improved frequency response in a SiGe npn device through improved dopant activation
- Jim Adkisson
- Marwan H. Khater
- et al.
- 2012
- ECS Meeting 2012
A self-aligned sacrificial emitter process for high performance SiGe HBT in BiCMOS
- Q. Liu
- Jim Adkisson
- et al.
- 2012
- ECS Meeting 2012
SOI CMOS technology with 360GHz fT NFET, 260GHz fT PFET, and record circuit performance for millimeter-wave digital and analog system-on-chip applications
- Sungjae Lee
- Jonghae Kim
- et al.
- 2007
- VLSI Technology 2007
Inter-laboratory comparison of CMOS distortion measurements
- Kate A. Remley
- Joe Gering
- et al.
- 2007
- ARFTG 2007
Distortion simulations with the PSP model: Common-gate circuits
- C. Michael Olsen
- Lawrence F. Wagner
- et al.
- 2007
- RFIC 2007