Double spin-torque magnetic tunnel junction devices for last-level cache applications
- G. Hu
- C. Safranski
- et al.
- 2022
- IEDM 2022
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15 results for L. Buzi
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions
- C. Safranski
- G. Hu
- et al.
- 2022
- VLSI Technology and Circuits 2022
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
- W. Chien
- E. Lai
- et al.
- 2023
- IMW 2023
STT-MRAM - Status and Outlook
- Daniel C. Worledge
- C. Safranski
- et al.
- 2022
- TMRC 2022
Study of surface interactions for encapsulation of phase change memory materials
- L. Buzi
- D. Koty
- et al.
- 2022
- SPIE Advanced Lithography 2022
Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
- W. Chien
- Lynne Gignac
- et al.
- 2022
- IRPS 2022
Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project
- W. Chien
- Lynne Gignac
- et al.
- 2022
- EDTM 2022
Effect of surface temperature on GeSbTe damage formation during plasma processing
- L. Buzi
- J. M. Papalia
- et al.
- 2021
- SPIE Advanced Lithography 2021
A no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCM
- Nanbo Gong
- W. Chien
- et al.
- 2020
- VLSI Technology 2020