Thirty years of Monte Carlo simulations of electronic transport in semiconductors: Their relevance to science and mainstream VLSI technology
- M.V. Fischetti
- S.E. Laux
- et al.
- 2004
- Journal of Computational Electronics
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48 results for Arvind Kumar
Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects
- S.E. Laux
- A. Kumar
- et al.
- 2004
- Journal of Applied Physics
Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors
- Arvind Kumar
- Massimo V. Fischetti
- et al.
- 2003
- Journal of Applied Physics
Straddle gate transistors: High Ion/Ioff transistors at short gate lengths
- S. Tiwari
- J.J. Welser
- et al.
- 1999
- DRC 1999
Modeling effects of focused ion beams
- F. Stern
- S.E. Laux
- et al.
- 1996
- Solid-State Electronics
Effect of nonequilibrium deep donors in heterostructure modeling
- Arvind Kumar
- Steven E. Laux
- et al.
- 1993
- Physical Review B
Electron states in a GaAs quantum dot in a magnetic field
- Arvind Kumar
- Steven E. Laux
- et al.
- 1990
- Physical Review B
Channel sensitivity to gate roughness in a split-gate GaAs-AlGaAs heterostructure
- Arvind Kumar
- Steven E. Laux
- et al.
- 1989
- Applied Physics Letters