Publications

48 results for Paul Ronsheim

Tunnel Current Measurements on P/N Junction Diodes and Implications for Future Device Design
- - Paul M. Solomon
  - David J. Frank
  - et al.
- 2003
- IEDM 2003
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- - K. Rim
  - R. Anderson
  - et al.
- 2003
- Solid-State Electronics
Sub-30 nm P⁺ abrupt junction formation in strained Si/Si_1-xGe_x MOS device
- - K.L. Lee
  - J.O. Chu
  - et al.
- 2002
- IEDM 2002
High temperature stability of Al₂O₃ dielectrics on Si: Interfacial metal diffusion and mobility degradation
- - S. Guha
  - E. Gusev
  - et al.
- 2002
- Applied Physics Letters
Modeling of the diffusion of implanted boron in strained Si/Si_1-xGe_x
- - Huilong Zhu
  - Kam-Leung Lee
  - et al.
- 2002
- SISPAD 2002
Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography
- - M. Gribelyuk
  - M.R. McCartney
  - et al.
- 2002
- Physical Review Letters
Nitrogen-induced transient enhanced diffusion of dopants
- - Cheruvu Murthy
  - Kilho Lee
  - et al.
- 2002
- Applied Physics Letters
Backside sputter depth profiling of phosphorus diffusion from a polysilicon source
- - P.A. Ronsheim
  - D. Chidambarrao
  - et al.
- 2002
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Strained Si NMOSFETs for high performance CMOS technology
- - K. Rim
  - S.J. Koester
  - et al.
- 2001
- VLSI Technology 2001
Ultrathin high-K gate stacks for advanced CMOS devices
- - E. Gusev
  - D.A. Buchanan
  - et al.
- 2001
- Technical Digest - International Electron Devices Meeting