High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation
- S. Guha
- E. Gusev
- et al.
- 2002
- Applied Physics Letters
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48 results for Paul Ronsheim
Nitrogen-induced transient enhanced diffusion of dopants
- Cheruvu Murthy
- Kilho Lee
- et al.
- 2002
- Applied Physics Letters
Ultrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
Comparison of secondary ion mass spectrometry profiling of sub-100 nm ultrashallow junctions using NO+2 and O+2 sputtering
- P.A. Ronsheim
- K.L. Lee
- 1998
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Two-dimensional profiling of shallow junctions in Si metal-oxide-semiconductor structures using scanning tunneling spectroscopy and transmission electron microscopy
- E.T. Yu
- K. Barmak
- et al.
- 1996
- Journal of Applied Physics
Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
- Joachim N. Burghartz
- Carol L. Stanis
- et al.
- 1995
- Applied Physics Letters
Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters
Implantation damage and the anomalous transient diffusion of ion-implanted boron
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters