Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
- H.Y. Cheng
- Matthew Brightsky
- et al.
- 2013
- IEDM 2013
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16 results for C.F. Chen
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Understanding amorphous states of phase-change memory using frenkel-poole model
- Y.H. Shih
- M.H. Lee
- et al.
- 2009
- IEDM 2009
The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te 5
- J.S. Washington
- E. Joseph
- et al.
- 2009
- MRS Spring Meeting 2009
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
Write strategies for 2 and 4-bit multi-level phase-change memory
- T. Nirschl
- J.B. Philipp
- et al.
- 2007
- IEDM 2007
Ultra-thin phase-change bridge memory device using GeSb
- Y.C. Chen
- C.T. Rettner
- et al.
- 2006
- IEDM 2006
Dynamic resistance - A metric for variability characterization of phase-change memory
- Bipin Rajendran
- Matt Breitwisch
- et al.
- 2009
- IEEE Electron Device Letters
A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems
- H.L. Lung
- Matthew Breitwisch
- et al.
- 2011
- VLSI Technology 2011
Influence of bottom contact material on the selective chemical vapor deposition of crystalline GeSbTe alloys
- Alejandro G. Schrott
- Chieh-Fang Chen
- et al.
- 2010
- MRS Online Proceedings Library