Jae-Sun Seo, Bernard Brezzo, et al.
CICC 2011
The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells. © 2009 IEEE.
Jae-Sun Seo, Bernard Brezzo, et al.
CICC 2011
Ming-Hsiu Lee, Simone Raoux, et al.
ICSICT 2012
Bipin Rajendran, Abu Sebastian, et al.
IEEE SPM
Manu Awasthi, Manjunath Shevgoor, et al.
HPCA 2012