Conference paper
Breakdown measurements of ultra-thin SiO2 at low voltage
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
Sodium ions in the SiO2 layer of MOS structures have been completely neutralized at liquid-nitrogen temperatures (77 °K) by avalanche injection of electrons from the Si substrate. Three principal electron capture cross sections (2×10-15, 2×10-19, and 5×10-20 cm2) associated with ionic sodium (Na +) contamination have been observed.
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
D.R. Young, E.A. Irene, et al.
Journal of Applied Physics
D. Arnold, E. Cartier, et al.
Physical Review B
F. Chen, O. Bravo, et al.
IRPS 2006