Adaptive wiring for 20 nm scale epitaxial silicon Ohmic contacts to silicon nanowires
- M.J. Rooks
- G.M. Cohen
- et al.
- 2007
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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178 results for Wilfried Haensch
Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
- G.M. Cohen
- M.J. Rooks
- et al.
- 2007
- Applied Physics Letters
Silicon CMOS devices beyond scaling
- Wilfried Haensch
- Edward J. Nowak
- et al.
- 2006
- IBM J. Res. Dev
Ultralow-voltage minimum-energy CMOS
- Scott Hanson
- Bo Zhai
- et al.
- 2006
- IBM J. Res. Dev
Optimizing CMOS technology for maximum performance
- David J. Frank
- Wilfried Haensch
- et al.
- 2006
- IBM J. Res. Dev
High-performance CMOS variability in the 65-nm regime and beyond
- Kerry Bernstein
- David J. Frank
- et al.
- 2006
- IBM J. Res. Dev
Universal tunneling behavior in technologically relevant P/N junction diodes
- Paul M. Solomon
- Jason Jopling
- et al.
- 2004
- Journal of Applied Physics
Compact modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2004
- International Journal of Electronics