Competitive and cost effective high-k based 28nm CMOS technology for low power applications
- F. Arnaud
- A. Thean
- et al.
- 2009
- IEDM 2009
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11 results for Kazuya Ohuchi
32nm general purpose bulk CMOS technology for high performance applications at low voltage
- F. Arnaud
- J. Liu
- et al.
- 2008
- IEDM 2008
Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
Silicide challenges for 22nm technologies and beyond
- Paul R. Besser
- Christian Lavoie
- et al.
- 2008
- ECS Meeting 2008
Material and integration issues for rare-Earth Silicides as gate and diffusion contacts in advanced CMOS
- C. D'Emic
- K. Ohuchi
- et al.
- 2008
- ECS Meeting 2008
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
Accurate method of measuring specific contact resistivity of interface between silicide and silicon and its application
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2012
- Japanese Journal of Applied Physics