Rubab Ume, Haibo Gong, et al.
Journal of Applied Physics
This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach 1×10-8 Ω-cm2 for both n+ and p+ Si by using novel test structures of small silicided contact with varied areas from 20-nm diameter to 260-nm diameter by e-beam lithography fabricated on highly doped substrate made by conventional source drain implantation. It demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22nm node. ©2008 IEEE.
Rubab Ume, Haibo Gong, et al.
Journal of Applied Physics
Conal E. Murray, Mikhail Treger, et al.
IEEE T-DMR
Cyril Cabral, Christian Lavoie, et al.
JVSTA
Conal E. Murray, I.C. Noyan
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties