In situ transmission electron microscopy observations of the formation of self-assembled ge islands on Si
- F.M. Ross
- J. Tersoff
- et al.
- 1998
- Microscopy Research and Technique
Publications
Date
Featured collections
Popular topics
108 results for Mark C. Reuter
Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures
- E.A. Stach
- R. Hull
- et al.
- 1998
- Journal of Applied Physics
A new low energy electron microscope
- R.M. Tromp
- M. Mankos
- et al.
- 1998
- Surface Review and Letters
High-temperature epitaxy of PtSi/Si(0 0 1)
- K.L. Kavanagh
- M.C. Reuter
- et al.
- 1997
- Journal of Crystal Growth
In situ TEM study of the growth of Ge on Si(111)
- F.K. LeGoues
- M. Hammar
- et al.
- 1996
- Surface Science
In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. Si(001)/Ge
- M. Hammar
- F.K. LeGoues
- et al.
- 1996
- Surface Science
Al on Si(111): Phase diagram and atomic mechanisms
- Thomas Michely
- Mark C. Reuter
- et al.
- 1996
- Physical Review B - CMMP
Relaxation mechanism of Ge islands/Si(001) at low temperature
- F. Legoues
- J. Tersoff
- et al.
- 1995
- Applied Physics Letters
Surfactant-mediated growth of Ge on Si(111)
- M. Horn-Von Hoegen
- M. Copel
- et al.
- 1994
- Physical Review B
Growth modes of Ge on GaAs(001)
- J. Falta
- M.C. Reuter
- et al.
- 1994
- Applied Physics Letters