Strain relaxation and threading dislocation density in helium-implanted and annealed Si 1-xGe x/Si( 100) heterostructures
- J. Cai
- P.M. Mooney
- et al.
- 2004
- Journal of Applied Physics
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119 results for P.M. Mooney
Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot
- L.J. Klein
- K.A. Slinker
- et al.
- 2004
- Applied Physics Letters
Elastic strain relaxation in free-standing SiGe/Si structures
- P.M. Mooney
- G.M. Cohen
- et al.
- 2004
- Applied Physics Letters
Mapping of strain fields about thin film structures using x-ray microdiffraction
- C.E. Murray
- I.C. Noyan
- et al.
- 2003
- Applied Physics Letters
Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters
High-quality crystalline layer transfer from a silicon-on-insulator substrate onto a sapphire substrate using wafer bonding
- D. Singh
- L.T. Shi
- et al.
- 2003
- Journal of Electronic Materials
High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes
- G.M. Cohen
- P.M. Mooney
- et al.
- 2002
- Journal of Applied Physics
Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers
- D.B. Aubertine
- M.A. Mander
- et al.
- 2002
- Journal of Applied Physics
Electron and hole mobility enhancement in strained SOI by wafer bonding
- Lijuan Huang
- Jack O. Chu
- et al.
- 2002
- IEEE Transactions on Electron Devices
Scanning x-ray microtopographs of misfit dislocations at SiGe/Si interfaces
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 2001
- Applied Physics Letters